Education, Honors, Awards
- Assistant Professor, Dept. of Physics and Astronomy , James Madison University, Harrisonburg, VA (2009-present)
- Postdoctoral Associate (Nanomaterials Characterization), North Carolina State University (2007-2009)
- Research Associate, CNR-INFM-Materials and Devices for Microelectronics National Laboratory, Italy (2003-2007)
- Postdoctoral Associate, CNR-INFM-Materials and Devices for Microelectronics National Laboratory, Italy (2001-2003)
- Ph.D., Department of Materials Engineering, University of Wisconsin-Milwaukee , Milwaukee, WI (2001)
- B.S., Department of Physics, University of Trieste, Italy (1994)
- Infrared for imaging and energy: (a) development of tool for infrared topography. (b) materials and geometry to improve efficiency of infrared radiation harvest.
- Atomic layer deposition (ALD) on proteins for imaging and engineering of bio-surfaces.
- Effects of geometry and surface curvature on physical phenomena.
Dr.. Scarel is interested in experiment and simulation work to investigate fundamental optical properties related to optical phonons in thin films. Oxide layers deposited with high uniformity using atomic layer deposition will be exposed to infrared (IR) radiation. The response is determined by surface longitudinal optical (LO) modes and transverse optical (TO) phonons, which are characterized by, respectively, absorbing and reflecting nature. In particular, surface LO modes are sensitive to oxide film geometry, i.e. shape, thickness, inclination with respect to the IR beam (this is partially included in the Berreman effect). The research will combine the absorbing nature and the geometry-dependence of surface LO mode behavior in oxide films illuminated by an IR beam to explore: (1) quantification and factors determining the amount of energy absorbed by surface LO modes, and (2) existence of a biunivocal correspondence between surface LO mode angular response and oxide layer topography.
Selected Recent Publications
- G. Scarel, J.-S. Na, and G. N. Parsons, "Angular behavior of the Berreman effect investigated in uniform Al2O3 layers formed by atomic layer deposition", J. Phys. Condens. Matt., 22, 155501 (2010)
- G. K. Hyde, G. Scarel, J. C. Spagnola, Q. Peng, K. Lee, B. Gong, K. G. Roberts, K. M. Roth, C. A. Hansen, C. K. Devine, S. M. Stweart, D. Hojo, J.-S. Na, S. S. Jur and G. N. Parsons, "Atomic layer deposition and abrupt wetting transitions on nonwoven polypropylene and woven cotton fabrics", Langmuir, 26, 2550-2558 (2010)
- G. Scarel, J. -S. Na, B. Gong, and G. N. Parsons, "Phonon response in the infrared region to thickness of oxide films formed by atomic layer deposition", Appl. Spectros., 64, 120-126 (2010)
- G. Scarel, G. K. Hyde, D. Hojo, and G. N. Parsons, “Berreman effect in infrared absorption spectroscopy of ionic oxide coatings formed by atomic layer deposition on three-dimensional structures”. J. Appl. Phys. 104, 094314 (2008).
- G. Scarel, A. Debernardi, D. Tsoutsou, S. Spiga, S. C. Capelli, L. Lamagna, S. N. Volkos, M. Alia, and M. Fanciulli, “Vibrational and electrical properties of hexagonal La2O3 films”. Appl. Phys. Lett. 91, 102901 (2007).
- E. Bonera, G. Scarel, M. Fanciulli, P. Delugas, and V. Fiorentini, “Dielectric properties of high-k oxides: theory and experiment for Lu2O3”. Phys. Rev. Lett. 94, 027602 (2005).
- G. Scarel, C. R. Aita, and A. V. Sklyarov, “Effect of substrate conductivity on infrared reflection spectra of thin TiO2 films”. J. Non-Cryst. Solids 318, 168-174 (2003).
- G. Scarel, C. J. Hirschmugl, V. V. Yakovlev, R. S. Sorbello, C. R. Aita, H. Tanaka, and K. Hisano, “Infrared response of vitreous titanium dioxide films with anatase short-range order”. J. Appl. Phys. 91, 1118-1128 (2002).
- G. Scarel, E. Bonera, C. Wiemer, G. Tallarida, S. Spiga, M. Fanciulli, I. L. Fedushkin, H. Schumann, Y. Lebedinskii, and A. Zenkevich, “Atomic-layer deposition of Lu2O3”. Appl. Phys. Lett. 85, 630-632 (2004).
- S. D. Elliott, G. Scarel, C. Wiemer, M. Fanciulli, and G. Pavia, “Ozone-based atomic layer deposition of alumina from TMA: growth, morphology, and reaction mechanism”. Chem. Mater. 18, 3764-3773 (2006).
- M. Perego, G. Scarel, M. Fanciulli, I. L. Fedushkin, and A. A. Skatova, “Fabrication of GeO2 layers using a divalent Ge precursor”. Appl. Phys. Lett. 90, 162115 (2007).